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Memory Mania: How a Once-in-Four-Decades Shortage Is Fueling a Memory Boom

Prices of memory are going crazy. SemiAnalysis has been calling this out for over a year since late 2024. The scariest thing is that we aren't even close to the peak. We go through fab by fab production and expansion versus detailed end market demand by memory type to forecast memory revenue, pricing, and margin better than anyone else. This has all been detailed in the SemiAnalysis memory model for a while, but we will share it more publicly today. First some background.

The Inevitability of Memory Cycles: A History of Booms and Busts

Since its commercial introduction in the 1970s, DRAM has benefited from the two scaling laws that defined the semiconductor industry: Moore’s Law and Dennard scaling. The 1T1C DRAM cell, with one access transistor and one storage capacitor, scaled for decades. Shrinking transistors reduced cost per bit, while clever capacitor engineering preserved sufficient charge to maintain signal integrity.

For much of the industry’s history, DRAM density scaled faster than logic, doubling roughly every 18 months instead of 24 months and driving dramatic cost reductions. As a commoditized product, manufacturers needed to sustain cost-per-bit declines to stay competitive. Suppliers who couldn’t compete on cost fell into a downward spiral: low sales left them short on cash to finance next-generation nodes, which in turn left them further behind on cost-per-bit. Many DRAM producers fell victim and went into bankruptcy, resulting in consolidation to just a few major players today.

For more details on the industry and DRAM basics, check out our technical deep dive:

Yet DRAM scaling has slowed significantly over the past few decades, and density gains over time have shrunk. Over the past decade, DRAM density has increased by only ~2× in total, versus roughly ~100× per decade during the industry’s peak scaling era. Capacitors are now extreme three-dimensional structures with aspect ratios approaching 100:1, storing just tens of thousands of electrons. For comparison, a small static shock when you touch a metal doorknob might involve the transfer of billions of electrons. The static charge on just a speck of dust might be 10,000x what is stored in a modern DRAM cell.

Bitlines and sense amplifiers, once secondary concerns, are now dominant constraints. Every incremental shrink reduces signal margin, increases variability, and raises cost.

Source: Micron

An easy way to understand the technical challenge in DRAM scaling is to think of a DRAM cell as a tiny

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